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c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 7 - d e c . , 2 0 1 1 a p l 3 2 1 6 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . l i + c h a r g e r p r o t e c t i o n i c provide input over-voltage protection provide input over-current protection provide over temperature protection provide reverse current blocking high immunity of false triggering high accuracy protection threshold low on resistance 0.75 w typ. compliance to iec61000-4-2 (level 4) + 8kv (contact discharge) + 15kv (air discharge) available in tdfn2x2-8, sot-23-6 packages lead free and green devices available (rohs compliant) f e a t u r e s a p p l i c a t i o n s cell phones g e n e r a l d e s c r i p t i o n s i m p l i f i e d a p p l i c a t i o n c i r c u i t the APL3216 provides complete li+ charger protection against input over-voltage, input over-current and over- temperature. when any of the monitored parameters is over the threshold, the ic turns off the charging current. all protections also have deglitch time against false trig- gering due to voltage spikes or current transients. when acin voltage exceeds ovp threshold, the device will turn off charging current. the charging current is con- trolled by the gatdrv pin. when sourcing a current from the gatdrv pin, the out pin delivers the charging cur- rent which is 200-fold magnified in amplitude based on gatdrv?s current. other features include accurate v vcdt /v acin voltage divider, reverse current blocking from out to acin and otp protection. the l3216 provides complete li+ charger protections, that can save the external components for the charger of cell phone?s pmic. the above features and small package make the APL3216 an ideal part for cell phones applications. p i n c o n f i g u r a t i o n acin 1 acin 2 vcdt 4 5 gatdrv gnd 3 8 out 7 out 6 chr_ldo tdfn2x2-8 (top view) 4 vcdt 6 acin chr_ldo 2 5 gnd gatdrv 3 out 1 sot-23-6 (top view) 5v adapter acin chr_ldo vcdt gnd APL3216 li+ battery gatdrv out pmic vcdt gatdrv chr_ldo isens vbat
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 7 - d e c . , 2 0 1 1 a p l 3 2 1 6 w w w . a n p e c . c o m . t w 2 o r d e r i n g a n d m a r k i n g i n f o r m a t i o n a b s o l u t e m a x i m u m r a t i n g s (note 1) symbol parameter rating unit v acin aci n input voltage ( acin to gnd) - 0.3 ~ 30 v v chr_ldo chr_ldo to gnd voltage - 0.3 ~ 7 v v gatdrv gatdrv to gnd voltage - 0.3 ~ v chr_ldo v v vcdt vcdt to gnd voltage - 0.3 ~ 7 v v out out to gnd voltage - 0.3 ~ 7 v i ou t out output current internally limited a t j maximum junction temperature 150 o c t stg storage temperature - 65 ~ 150 o c t sdr maximum lead soldering temperature , 10 seconds 26 0 o c symbol parameter typical value unit q ja tdfn2x2 - 8 junction - to - ambient resistance in free air (note 2) 80 o c/w q ja sot - 23 - 6 junction - to - ambient resistance in free air (note 2) 250 o c/w t h e r m a l c h a r a c t e r i s t i c note 2: q ja is measured with the component mounted on a high effective thermal conductivity test board in free air. the exposed pad of tdfn2x2-8 is soldered directly on the pcb. n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j - s t d - 0 2 0 d f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . a n p e c d e f i n e s ? g r e e n ? t o m e a n l e a d - f r e e ( r o h s c o m p l i a n t ) a n d h a l o g e n f r e e ( b r o r c l d o e s n o t e x c e e d 9 0 0 p p m b y w e i g h t i n h o m o g e n e o u s m a t e r i a l a n d t o t a l o f b r a n d c l d o e s n o t e x c e e d 1 5 0 0 p p m b y w e i g h t ) . note 1:stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under ?recom- mended operating conditions?is not implied. exposure to absolute maximum rating conditions for extended periods may affect vice reliability. APL3216 package code operating ambient temperature range i : -40 to 85 o c handling code tr : tape & reel assembly material handling code temperature range package code x - date code g : halogen and lead free device assembly material qb : tdfn2x2-8 c : sot-23-6 apl 3216 qb: l16 x apl 3216 c: x - date code l16a x
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 7 - d e c . , 2 0 1 1 a p l 3 2 1 6 w w w . a n p e c . c o m . t w 3 symbol parameter range unit v acin acin input voltage 4.5 ~ 9 v i out output current 0.7 a t a ambient temperature - 40 ~ 85 o c t j junction temperature - 40 ~ 125 o c c out output capacitor 0.1~1 m f r e c o m m e n d e d o p e r a t i n g c o n d i t i o n s (note 3) note 3: refer to the typical application circuit unless otherwise specified, these specifications apply over v acin =5v, t a = -40 ~ 85 o c. typical values are at t a =25 o c. ap l3216 symbol parameter test conditions min typ max unit acin input current and power - on - reset (por) i acin acin supply current i out =0a, i chr =0a - 250 500 m a v por acin por threshold v acin rising - 2.6 - v acin por hysteresis - 250 - mv t b(acin) acin power - on blanking time - 8 - ms internal switch on resistance acin to out on resistance i out =0.6a 750 m w chr_ldo discharge resistance - 500 - w protections i cl over - current trip threshold 0.9 1.25 1.6 - short - circuit current limit - 0 .75 - a - input ovp threshold 9.5 10 10.5 v - chr_ldo output series resistance 2.4 3 - k w vcdt internal divider divider ratio v vcdt /v acin 0.1035 0.1056 0.1078 v/v charge current control current mirror gain i out =0.6a, i out /i gatdrv 100 200 300 a/a thermal shutdow protection t otp thermal shutdown threshold t j rising - 160 - c thermal shutdown hysteresis - 40 - c e l e c t r i c a l c h a r a c t e r i s t i c s
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 7 - d e c . , 2 0 1 1 a p l 3 2 1 6 w w w . a n p e c . c o m . t w 4 p i n d e s c r i p t i o n pin tdfn2x2 - 8 sot - 23 - 6 no. no. name f unction 1 2 6 acin power supply input. c onnect this pin to external dc supply. bypass to gnd with a 1 m f ( minimum ) ceramic capacitor . 3 5 gnd ground terminal . 4 4 vcdt provide an internal voltage divider. thi s pin divides acin voltage into 0.1056 ratio. 5 3 gatdrv charging current control pin. when sinking a current from this pin, the out pin will source out a current whose magnitude is 200x i gatdrv . 6 2 chr _ldo output pin. the pin provide s supply voltage to the pmic input. bypass to gnd with a 1 m f ( minimum ) ceramic capacitor . 7 8 1 out output pins. the pin provide s supply source current in series with a resistor to battery. exposed pad - gnd exposed thermal pad. must be electrically connected to the gnd pin. b l o c k d i a g r a m gatdrv chr_ldo vcdt out gnd acin
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 7 - d e c . , 2 0 1 1 a p l 3 2 1 6 w w w . a n p e c . c o m . t w 5 t y p i c a l a p p l i c a t i o n c i r c u i t 5v adapter acin chr_ldo vcdt gnd APL3216 li+ battery gatdrv out pmic vcdt gatdrv chr_ldo isens vbat 0.2 w c chr_ldo 2.2 m f/6.3v c acin 1 m f/25v designation description 1 m f, 25v, x5r, 0603 murata grm 188r61e105k c acin 1 m f, 16v, x5r, 0603 murata grm 188r61c105k c chr_ldo 1 m f, 6.3v, x5r, 0603 murata grm 185r60j225ke26
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 7 - d e c . , 2 0 1 1 a p l 3 2 1 6 w w w . a n p e c . c o m . t w 6 f u n c t i o n d e s c r i p t i o n acin power-on-reset (por) the APL3216 is built-in a power-on-reset circuit to keep the output shut off until internal circuitry is operating properly. the por circuit has hysteresis and a de-glitch feature so that it will typically ignore undershoot transients on the input. when input voltage exceeds the por thresh- old and after 8ms blanking time, the output voltage starts a soft-start to reduce the inrush current. acin over-voltage protection (ovp) the chr_ldo output of the ic operates similar to a lin- ear regulator. if the input voltage rises above v ovp , the internal transistor will be turned off within 5 m s to protect connected system on out pin. when the input voltage returns below the input ovp threshold minus the hysteresis, the transistor is turned on again after 1ms recovery time. the input ovp circuit has a 200mv hyster- esis and a recovery time of t on(ovp) to provide noise im- munity against transient conditions. charging current control the charging current is controlled by the gatdrv pin. when sourcing a current from the gatdrv pin, the out pin delivers the charging current which is 200-fold mag- nified in amplitude based on gatdrv?|s current. the i out current can be calculated by this following equation: i out =200*i gatdrv where the i out is the current flowing out from out pin. the i gatdrv is the current flowing out from gatdrv pin. current limit the output current is monitored by the internal current limit circuit. when the output current reaches the over current trip threshold, the device limits the output current at current limit threshold. temperature protection when the junction temperature exceeds 160 o c, the inter- nal thermal sense circuit turns off the power fet and allows the device to cool down. when the device?s junc- tion temperature cools by 40 o c, the internal thermal sense circuit will enable the device, resulting in a pulsed output during continuous thermal protection. thermal protection is designed to protect the ic in the event of over temperature conditions. for normal operation, the junction temperature cannot exceed t j =+125 o c. t h e a p l 3 2 1 6 v i n i n p u t p i n f u l l y s u p p o r t s t h e i e c 6 1 0 0 0 - 4 - 2 . t h a t m e a n s t h e v i n p i n h a s i m m u n i t y o f 1 5 k v e s d d i s c h a r g e i n a i r c o n d i t i o n , a n d i m m u n i t y o f 8 k v e s d d i s - c h a r g e i n c o n t a c t c o n d i t i o n . e s d t e s t s
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 7 - d e c . , 2 0 1 1 a p l 3 2 1 6 w w w . a n p e c . c o m . t w 7 p a c k a g e i n f o r m a t i o n t d f n 2 x 2 - 8 min. max. 0.80 0.00 0.18 0.30 1.00 1.60 0.05 0.60 a a1 b d d2 e e2 e l millimeters a3 0.20 ref tdfn2x2-8 0.30 0.45 1.00 0.008 ref min. max. inches 0.031 0.000 0.007 0.012 0.039 0.063 0.024 0.012 0.018 0.70 0.039 0.028 0.002 0.50 bsc 0.020 bsc s y m b o l 1.90 2.10 0.075 0.083 1.90 2.10 0.075 0.083 d e a b a1 a3 d2 e 2 l e pin 1 corner note : 1. follow from jedec mo-229 wccd-3.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 7 - d e c . , 2 0 1 1 a p l 3 2 1 6 w w w . a n p e c . c o m . t w 8 p a c k a g e i n f o r m a t i o n s o t - 2 3 - 6 0 l view a 0 . 2 5 gauge plane seating plane a a 2 a 1 e d e 1 see view a b c e1 e 0 8 0 8 0.020 0.009 0.006 0.024 0.051 0.057 max. 0.30 l 0 e e e1 e1 d c b 0.08 0.30 0.012 0.60 0.95 bsc 1.90 bsc 0.50 0.22 0.075 bsc 0.037 bsc 0.012 0.003 millimeters min. s y m b o l a1 a2 a 0.00 0.90 sot-23-6 max. 1.30 0.15 1.45 min. 0.000 0.035 inches 1.40 2.60 3.00 1.80 2.70 3.10 0.118 0.071 0.122 0.102 0.055 0.106 note : 1. follow jedec to-178 ab. 2. dimension d and e1 do not include mold flash, protrusions or gate burrs. mold flash, protrusion or gate burrs shall not exceed 10 mil per side. seating plane < 4 mils -t-
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 7 - d e c . , 2 0 1 1 a p l 3 2 1 6 w w w . a n p e c . c o m . t w 9 d e v i c e s p e r u n i t package type unit quantity tdfn2x2 - 8 tape & reel 3000 sot - 23 - 6 tape & reel 3000 c a r r i e r t a p e & r e e l d i m e n s i o n s application a h t1 c d d w e1 f 178.0 ? 2.00 50 min. 8.4+2.00 - 0.00 13.0+0.50 - 0.20 1.5 min. 20.2 min. 8.0 ? 0.20 1.75 ? 0.10 3.50 ? 0.05 p 0 p1 p 2 d 0 d1 t a 0 b 0 k 0 tdfn2x2 - 8 4.0 ? 0.10 4.0 ? 0.10 2.0 ? 0.05 1.5+0.10 - 0.00 1.5 min. 0. 6+0.00 - 0.4 3.35 min 3.35 min 1.30 ? 0.20 a h t1 c d d w e1 f 178.0 ? 2.00 50 min. 8.4+2.00 - 0.00 13.0+0.50 - 0.20 1.5 min. 20.2 min. 8.0 ? 0.30 1.75 ? 0.10 3.5 ? 0. 05 p 0 p1 p 2 d 0 d1 t a 0 b 0 k 0 sot - 23 - 6 4.0 ? 0.10 4.0 ? 0.10 2.0 ? 0.05 1.5+0.10 - 0.00 1.0 min. 0.6+0.00 - 0.40 3.20 ? 0.20 3.10 ? 0.20 1.50 ? 0.20 ( mm) h t1 a d a e 1 a b w f t p0 od0 b a0 p2 k0 b 0 section b-b section a-a od1 p1
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 7 - d e c . , 2 0 1 1 a p l 3 2 1 6 w w w . a n p e c . c o m . t w 1 0 t a p i n g d i r e c t i o n i n f o r m a t i o n t d f n 2 x 2 - 8 user direction of feed c l a s s i f i c a t i o n p r o f i l e
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 7 - d e c . , 2 0 1 1 a p l 3 2 1 6 w w w . a n p e c . c o m . t w 1 1 c l a s s i f i c a t i o n r e f l o w p r o f i l e s profile feature sn - pb eutectic assembly pb - free assembly preheat & soak temperature min (t smin ) temperature max (t smax ) time (t smin to t smax ) ( t s ) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 1 2 0 seconds average ramp - up rate (t smax to t p ) 3 c/second ma x. 3 c/second max. liquidous temperature ( t l ) time at l iquidous (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak package body temperature (t p ) * see classification temp in table 1 see classification temp in table 2 time (t p ) ** within 5 c of the spec ified c lassification t emperature ( t c ) 2 0 ** seconds 3 0 ** seconds average r amp - down rate (t p to t smax ) 6 c/second max. 6 c/second max. time 25 c to p eak t emperature 6 minutes max. 8 minutes max. * tolerance for peak profile temperature (t p ) is defined a s a supplier minimum and a user maximum. ** tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. table 2. pb - free process ? classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 c 260 c 260 c 1.6 mm ? 2.5 mm 260 c 250 c 245 c 3 2.5 mm 250 c 245 c 245 c table 1. snpb eutectic process ? classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 235 c 22 0 c 3 2.5 mm 220 c 220 c test item method description solderability jesd - 22, b102 5 sec, 245 c holt jesd - 22, a108 1000 hrs, bias @ tj=125 c pct jesd - 22, a102 168 hrs, 100 % rh, 2atm , 121 c tct jesd - 22, a104 500 cycles, - 65 c~150 c esd jesd - 22, a114; a115 vhbm ? 2kv, vmm ? 200v lat ch - up jesd 78 10ms, 1 tr ? 100ma r e l i a b i l i t y t e s t p r o g r a m
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 7 - d e c . , 2 0 1 1 a p l 3 2 1 6 w w w . a n p e c . c o m . t w 1 2 c u s t o m e r s e r v i c e a n p e c e l e c t r o n i c s c o r p . head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 t a i p e i b r a n c h : 2 f , n o . 1 1 , l a n e 2 1 8 , s e c 2 j h o n g s i n g r d . , s i n d i a n c i t y , t a i p e i c o u n t y 2 3 1 4 6 , t a i w a n t e l : 8 8 6 - 2 - 2 9 1 0 - 3 8 3 8 f a x : 8 8 6 - 2 - 2 9 1 7 - 3 8 3 8

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